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PD - 91433B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA9160 100K Rads (Si) IRHNA93160 300K Rads (Si) RDS(on) 0.068 0.068 ID -38A -38A
IRHNA9160 JANSR2N7425U 100V, P-CHANNEL
REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY
QPL Part Number JANSR2N7425U JANSF2N7425U
TM (R)
SMD-2
International Rectifier's RADHard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TM
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range PCKG Mounting Surface Temp. Weight For footnotes refer to the last page -38 -24 -152 300 2.4 20 500 -38 30 -17 -55 to 150 300 ( for 5s) 3.3(typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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01/29/01
IRHNA9160, JANSR2N7425U
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS BVDSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min
-100 -- -- -- -2.0 15 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.11 -- -- V V/C
Test Conditions
VGS = 0V, ID =-1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -24A VGS = -12V, ID = -38A VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -24A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -38A VDS = -50V VDD = -50V, ID = -38A, VGS =-12V, RG = 2.35
-- 0.068 -- 0.071 -- -4.0 V -- -- S( ) -- -25 A -- -250 -- -- -- -- -- -- -- -- -- 4.0 -100 100 290 72 90 35 170 190 190 --
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
6000 1500 400
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr QRR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -38 -152 -3.3 300 2.1
Test Conditions
A
V nS C
Tj = 25C, IS = -38A, VGS = 0V Tj = 25C, IF = -38A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
-- -- -- 1.6 0.42 --
C/W
Test Conditions
soldered to a 1"square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNA9160, JANSR2N7425U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage
100K Rads(Si)1 300 K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-24A VGS = -12V, ID =-24A VGS = 0V, IS = -38A
Min -100 -2.0 -- -- -- -- -- --
Max -- -4.0 -100 100 -25 0.069 0.068 -3.3
Min -100 -2.0 -- -- -- -- -- --
Max -- -5.0 -100 100 -25 0.069 0.068 - 3.3
1. Part number IRHNA9160 (JANSR2N7425U) 2. Part numbers IRHNA93160 (JANSF2N7425U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Cu LET MeV/(mg/cm2)) 36.8 59.8 28 Energy (MeV) 305 343 285 Range (m) @VGS=0V @VGS=5V 39 -100 -100 32.6 -60 -- 43 -100 -100 VDS (V) @VGS=10V -70 -- -100 @VGS=15V -50 -- -70 @VGS=20V -40 -- -60
-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA9160, JANSR2N7425U
Pre-Irradiation
1000
-I D , Drain-to-Source Current (A)
100
-5.0V
20s PULSE WIDTH T = 25 C
J 1 10 100
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
1000
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
-5.0V
20s PULSE WIDTH T = 150 C
J 1 10 100
10
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -38A
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 C TJ = 150 C
1.5
100
1.0
0.5
10 5 6 7 8
V DS = -50V 20s PULSE WIDTH 9 10 11
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs.Temperature
Pre-Irradiation
IRHNA9160, JANSR2N7425U
10000
-VGS , Gate-to-Source Voltage (V)
8000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -38 A
16
C, Capacitance (pF)
VDS =-80V VDS =-50V VDS =-20V
6000
Ciss
12
4000
8
2000
C oss C rss
4
0 1 10 100
0 0 50 100
FOR TEST CIRCUIT SEE FIGURE 13
200 250 150 300
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
-ID , Drain Current (A) I
100
TJ = 150 C TJ = 25 C
100
100us
10
1ms
10
1
10ms
0.1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0
1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRHNA9160, JANSR2N7425U
Pre-Irradiation
40
V DS VGS
RD
D.U.T.
+
-ID , Drain Current (A)
VGS
20
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
10
td(on) tr t d(off) tf
VGS 10%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. CaseTemperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
30
RG
V DD
Pre-Irradiation
IRHNA9160, JANSR2N7425U
VDS
L
1200
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T
IA S
VD D A D R IV E R
1000
VGS -20V
tp
TOP BOTTOM
-17A -24A -38A
ID
0.0 1
800
600
15V
400
Fig 12a. Unclamped Inductive Test Circuit
200
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRHNA9160, JANSR2N7425U
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, L= 0.7mH Peak IL = -38A, VGS = -12V ISD -38A, di/dt -385A/s, VDD -100V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/01
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